NUMERICAL MODELLING AND SIMULATION OF LEAD-FREE CHALCOGENIDE PEROVSKITES BY USING 1-D SOLAR CELL CAPACITANCE SIMULATOR

Abstract

In this study we investigates the potential use of chalcogenide perovskites absorbers (BaHfS₃ and SrHfS₃), for solar cell applications. The electrical and optical properties of these absorbers are examined in a simulated solar cell structure consisting of SnS₂ as the electron transport layer and Sb₂S₃ as the hole transport layer. The Solar Cell Capacitance Simulator (SCAPS-1D) was used to conduct these simulations. Bandgap energies, electron affinities, dielectric constants, mobilities, and defect concentrations are important considerations in optimizing layer thicknesses and interface properties. The study will evaluate solar cell performance indicators such as fill factor, open-circuit voltage, power conversion efficiency, and current density. The results demonstrate that, BaHfS₃ generates carriers more efficiently and maintains a higher current density than SrHfS₃ in solar cell. Both materials show excellent quantum efficiency in the visible spectrum; however, BaHfS₃ has a little edge over SrHfS₃.